High-speed and highly accurate evaluation of electrical characteristics in MOSFETs

摘要

Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test circuit, accurate and high speed measurement can be obtained. These numerous data of variability, noise, and leakage current caused by the defects in MOSFETs are very useful for the process development and constructing the device structures.