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The impact of high Vinfth/inf drifts tail and real workloads on SRAM reliability

机译：高V TH 漂移尾部和真实工作量的SRAM可靠性

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Based on experimental measurements at bitcell level combined with SPICE and Monte-Carlo simulations, an analytical method is presented to accurately predict fresh/aged Vmin distributions. The impact of BTI variability modeling and real workloads considerations is also deeply analyzed in this paper.

机译：基于位电池水平的实验测量与Spice和Monte-Carlo模拟相结合，提出了一种分析方法，以准确地预测新鲜/老化的VMIN分布。本文还深入分析了BTI变异建模和实际工作负载考虑的影响。

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《International Reliability Physics Symposium 》|2014年||共6页
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Angot D.; Huard V.; Quoirin M.; Federspiel X.; Haendler S.; Saliva M.; Bravaix A.;
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关键词
Bias Temperature Instability (BTI); Static Random Access Memory (SRAM); reliability; variability; workloads;

机译：偏置温度不稳定（BTI）;静态随机存取存储器（SRAM）;可靠性;变异性;工作负载;

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The impact of high Vinfth/inf drifts tail and real workloads on SRAM reliability

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