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Impact of Emission Broadening on Plasmonic Enhancement with Metallic Gratings

机译:辐射加宽对金属光栅等离子体增强的影响

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In particular, the surface plasmon polariton (SPP) is attractive to e nhance the spontaneous emission (SE) from active materials due to the larger density of state (DOS) and smaller mode volume comparing with optical wave, namely Purcell effect. Usually, the Purcell factor (PF) is calculated from the reduced form of Fermi's golden rule, where only the DOS and mode volume of photon (or SPP mode) are involved. Obviously, the PFs calculated with reduced form exclude the influence of active m aterial and only evaluate the effect of cavity or S PP waveguide. However, for a practical emitter, the linewidth could not always be ignored. For example, the ensemble emission linewidth of mass Si- quantum dots (QD) is about 220meV~400meV (90~160nm), which are much wider than the linewidth of the SPP DOS In this work, the PF of SPP mode on Au-Si_3N_4 grating is calculated with full integration formula of Fermi's golden rule by taking account of the spontaneous emission linewidth from single Si-QD. The calculated PF is about 1.7-1.4 within the emission range of hω_0 =1.9~1.6eV. Comparing with the PF value of 266.9~30.1, which is calculated without including the emission linewidth of Si-QD, it could be easily concluded that the impact of rather wide emission linewidth is fatal for applying plasmonic enhancement. To obtain some useful guidelines, we also discuss the necessary linewidth for effective plasmonic enhancement on Si-QDs. It is found that if the emission linewidth could be decreased to several tens of μeV, plasmonic enhancement would be helpful.
机译:特别地,由于表面等离子体激元(SPP)与光波(即赛尔效应)相比,具有更大的态密度(DOS)和更小的模式体积,因此可以提高活性材料的自发发射(SE)。通常,赛尔因子(PF)是根据费米黄金定律的简化形式计算的,其中仅涉及DOS和光子的模式体积(或SPP模式)。显然,以简化形式计算的PF排除了活性材料的影响,仅评估了空腔或S PP波导的影响。但是,对于实际的发射器,线宽不能总是被忽略。例如,质量Si量子点(QD)的整体发射线宽约为220meV〜400meV(90〜160nm),比SPP DOS的线宽宽得多。考虑到单个Si-QD的自发发射线宽,采用费米黄金定律的完整积分公式计算出Si_3N_4光栅。在hω_0= 1.9〜1.6eV的发射范围内,计算出的PF约为1.7-1.4。与不包括Si-QD的发射谱线宽度而计算出的PF值266.9〜30.1相比,可以很容易地得出结论,相当宽的发射谱线宽度的影响对于应用等离激元增强是致命的。为了获得一些有用的指导,我们还讨论了在Si-QD上有效进行等离激元增强的必要线宽。已经发现,如果发射线宽可以减小到几十μeV,则等离子体增强将是有帮助的。

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