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Spurious Free SAW Resonators on Layered Substrate with Ultra-High Q, High Coupling and Small TCF

机译:具有超高Q,高耦合和小TCF的分层基板上的虚假免费锯谐振器

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A new type of surface acoustic wave (SAW) configuration consisting of a very thin single crystal piezoelectric film bonded onto a support substrate (layered substrate) has been actively developed in recent years. This layered SAW structure exhibits superior performance compared to conventional SAW or temperature compensated (TC) SAW, with SiO_2 over coat, on traditional piezoelectric substrates through a higher quality factor (Q), higher electromechanical coupling factor (k~2) and smaller temperature coefficient of frequency (TCF). However, without a careful design of the substrate, the layered SAW potentially has spurious responses in the out-of-band frequencies due to higher order modes guided in the layer. This paper focuses on the design of layered substrate not only to optimize its narrow band characteristics (Q, k~2, TCF) but also for eliminating the out-of-band spurious responses. By using a finite element method/boundary element method (FEM/BEM) approach, requirements for the substrate velocity and piezoelectric layer thickness are derived to avoid the presence of spurious modes. Based on the analyses, a new orientation of quartz is proposed as a spurious free support substrate. Sapphire as well as new quartz is selected as a demonstration support substrate and bonded wafers are fabricated using LiTaO_3 (LT) piezoelectric thin film. Fabricated SAW resonators on LT/sapphire confirm ultra-high Q (>7,000), high k~2 (9.0%) and small TCF (-2 ppm/K) at 1 GHz, but have several out-of-band spurious responses. LT/new quartz SAW resonators also show ultra-high Q (>6,000), high k~2 (9.9%) and small TCF (-23 ppm/K) at 1 GHz, and achieve a spurious free out-of-band response as expected.
机译:近年来,由粘合到支撑基板(层状基板)上的非常薄的单晶压电膜组成的一种新型的表面声波(SAW)构造。与传统的锯或温度补偿(TC)锯相比,该层状锯结构具有卓越的性能,在传统的锯或温度补偿(TC)上,通过更高的质量因子(Q),更高的机电耦合因子(K〜2)和较小的温度系数,在传统的压电基板上具有SiO_2。频率(TCF)。然而,在没有仔细设计基板的情况下,由于在层中引导的更高阶模式,层状锯可能在带外频率中具有杂散的响应。本文侧重于分层基板的设计,不仅要优化其窄带特性(Q,K〜2,TCF),而且还用于消除带外杂散的响应。通过使用有限元方法/边界元方法(FEM / BEM)方法,导出对基板速度和压电层厚度的要求以避免虚假模式的存在。基于分析,提出了一种新的石英方向作为杂散的游离支持基质。选择蓝宝石以及新的石英作为演示支持基板,使用LiTaO_3(LT)压电薄膜制造粘合的晶片。上LT /蓝宝石确认超高Q(> 7000),高K〜2(9.0%)和小TCF(-2 PPM / K)在1GHz制造的SAW谐振器,但具有外的频带数的寄生响应。 LT /新的石英SAW谐振器还显示超高Q(> 6,000),高k〜2(9.9%)和小TCF(-23 ppm / k),在1 GHz,并实现了虚假的带外应答正如预期的那样。

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