CASCADE PHOTOCONVERTERS ON THE BASIS OF THE HOMOGENEOUS SEMICONDUCTOR TUNNEL STRUCTURES

摘要

The new type of the planar photoconverter on the basis of semiconductor structure n~+-p-p~+(t)n~+-p-p~+(t) ... n~+-p-p~+(t), created on the base photoconverter is considered. Between p~+- and n~+-layers form a tunnel layer (t). The task of optimum parameters definition and the maximal values of generated power in idealized cascade photoconverters with neglecting of a charge carriers recombination in thin epitaxial layers is solved. At the same time recombination in tunnel layers with thickness 5 is assumed so big, that they completely no photoactive. Researchers have shown great perspectives of highly effective cascade photoconverters creation on the basis of silicon, however, presence of tunnel layers leads to essential reduction of maximal characteristics. The photocurrent exponentially falls at increase N. The open circuit voltage, power and efficiency changes no monotonously, reaching maxima at the some N and asymptotically exponentially falling. Maxima of efficiency considerably exceed of base photoconverter efficiency.