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Synthesis of MoS2 via in situ sulfurize sputtering Mo

机译:MOS 2 原位硫化溅射MO的合成

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Transition metal dichalcogenides (TMDS) have attract more attention, but it is still a tricky issue to synthesize large area MoS2 nanofilms. Here a two-step process method was used to produce MoS2 nanofilms with large scale. Pre-studies have proved that the crystallinity of sputtered Mo precusors have great effect on MoS2 synthesis. By using varing deposition powers the diffierent crystallinities of Mo films can be obtained. Then magnetron sputtered Mo thin-films were used as Mo precusor to synthesize MoS2 nanofilm in high tempreture. By controlling the sputtering power of Mo, a certain crystal orientation of Mo thin film can be deposited which can enhance the Raman spectrum and improve the quality of MoS2 nanofilms.
机译:过渡金属二甲硅藻(TMDS)吸引了更多的关注,但仍然是合成大面积MOS2纳米丝的棘手问题。这里使用两步工艺方法以产生具有大规模的MOS2纳米丝。预先研究证明,溅射的MO预防剂的结晶度对MOS2合成具有很大的效果。通过使用变化沉积,可以获得Mo膜的差异晶体裂缝。然后使用磁控溅射的Mo薄膜作为Mo precusor,以在高温下合成MOS2纳米丝。通过控制Mo的溅射功率,可以沉积多晶膜的一定晶体取向,这可以增强拉曼光谱并提高MOS2纳米丝的质量。

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