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Investigation Between 2- Terminal and 4- Terminal Kelvin Structure in Terms Of WLR ISOEM And PLR EM for Metal Interconnection

机译:WLR ISOEM和PLR E互联的WLR ISOEM和PLR EM之间的2 - 末端和4末末端开尔文结构的研究

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Electromigration performance is a key index for BEOL process reliability, in this paper, 2-terminal and 4-terminal kelvin structure EM tests are performed in both WLR IsoEM and PLR EM method, it's found 2-terminal WLR IsoEM test time is faster than that of 4 terminal kelvin structure under the same desired temperature stress condition, the TTF ratio is about 0.6 and 0.5 times for narrow metal (MxN) and wide metal (MxW) respectively. Besides, Iso-EM TTF increases with the rising of the chuck temperature and lower layer metal shows worse than the upper. While on the contrary, 2 terminal PLR EM TTF is bigger than that of 4 terminal. This distinct observation is investigated and its mechanism is discussed in the paper.
机译:电迁移性能是BEOL工艺可靠性的关键索引,本文在WLR ISOEM和PLR EM方法中执行了2码,2端和4端开尔文结构EM测试,它发现了2个终端WLR ISOEM测试时间比这更快 在相同期望的温度应激条件下4末端开尔文结构,TTF比分别为窄金属(MXN)和宽金属(MXW)的约0.6%和0.5倍。 此外,ISO-EM TTF随着卡盘温度的上升而增加,下层金属显示比上层更差。 虽然相反,2个端子PLR EM TTF大于4个终端。 研究了这种独特的观察,并在论文中讨论了其机制。

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