One of perspective directions of a solid-state electronic engineering is producing new devices on the basis of magnetoelectric materials. Design and application of new nonreciprocal microstrip microwave attenuator are considered. Experimental results showed 38 dB attenuation at frequency range 5-10 GHz with applied electric field E = 0-7 kV/cm. The data obtained are in good agreement with theory. This technology can significantly reduce the cost of devices, and enhance speed of operation.
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