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Optimization of a chip-scale Rb plasma discharge light source: Effects of RF drive frequency and cell impedance

机译:芯片级Rb等离子体放电光源的优化:RF驱动频率和电池阻抗的影响

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We report on the performance improvements achieved on our previously demonstrated proof-of-concept chip-scale dielectric barrier discharge (DBD) Rb lamp [1], (1) with change in the plasma regime of operation by changing RF drive frequency and (2) with an improved electrode design, for optical pumping in a chip-scale Double-Resonance (DR) atomic clock. Our realized microfabricated planar DBD Rb lamp now has externally deposited Al electrodes, allowing for efficient power coupling to the discharge volume and was tested at different RF drive frequencies ranging from 2 MHz to 500 MHz. Currently the light source can emit up to 380 μW of optical power on the Rb D2 line depending on input conditions.
机译:我们报告了我们先前证明的概念验证的芯片级介电势垒放电(DBD)Rb灯所实现的性能改进,[1],(1)通过改变射频驱动频率来改变等离子体的工作状态,以及(2) )具有改进的电极设计,可在芯片级双谐振(DR)原子钟中进行光泵浦。我们现已实现的超细平面DBD Rb平面灯具有外部沉积的Al电极,可将功率有效地耦合到放电体积,并已在2 MHz至500 MHz的不同RF驱动频率下进行了测试。当前,根据输入条件,光源可以在Rb D2线上发出高达380μW的光功率。

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