Effect of Hf-N Bond on Properties of Thermally Stable Amorphous HfSiON and Applicability of this Material to Sub-50nm Technology Node LSIs

摘要

The electric and structural properties of hafnium silicon oxynitride (HfSiON) with high Hf/(Hf+Si) (35～100%) were investigated, focusing on the role of Hf-N bonds inside the material. The results show that the existence of Hf-N bonds in the films results in a high dielectric constant and high thermal stability. Using ultra-thin HfSiON with high Hf and high N concentrations, thermally stable amorphous high-K stack with EOT of 0.6nm and with 10{sup}(-5) times Jg reduction relative to that in SiO{sub}2 was obtained.