5.3: Analytic Models of Synchronized Dual-Gate a-IGZO TFTs

摘要

The equations for the transfer characteristics and sub-threshold swing of dual-gate a-IGZO TFTs, when the top and bottom gate electrodes are connected (synchronized), are developed based on device physics. From these equations, it is found that synchronized DG a-IGZO TFTs can be considered as conventional TFTs with modified gate capacitance and threshold voltage. The device parameters of coplanar homojunction DG TFTs are extracted using these equations.