Modulus and Internal Friction of W-doped VO2 Thin Films

摘要

The thin films of W-doped VO2 were synthesized onto Mo substrates using reactive DC and RF magnetic cosputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2 were investigated with measuring X-ray diffraction (XRD), QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VChthin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2IS more than that of un-doped VO2, but more smoother.