【24h】

Keynote speeches

机译:主题演讲

获取原文

摘要

On chip interconnections are becoming a bottleneck to continue down scaling the transistor size in integrated circuits. On chip optical links have been considered as a possible solution to reduce the interconnection impact on consumption and performances for the longest interconnections in integrated circuits, for instance to provide a very high bandwidth between different cores. Low loss Si waveguides and fast photodetectors at 1.55 µm wavelength are compatible with CMOS fabrication, but high frequency and efficient lasers are still needed. The fabrication flow is based on molecular bonding of sub-wavelength thick III–V dies onto a 200 mm SOI wafer containing Si 220 nm height waveguides and grating couplers for light collection. III–V Microdisk lasers, fabricated on a 200 mm CMOS pilot line are presented in this work. In a first section, lasers are coupled to Si waveguides and different coupling schemes are investigated. In a second section, lasers are coupled at two different points to modulate their emission, through an active control of the coupling losses. The control of the emitting wavelength and the direct modulation of the laser are experimentally demonstrated. Two devices with different coupling schemes are experimentally studied, and their properties are compared.
机译:片上互连正在成为继续缩小集成电路中晶体管尺寸的瓶颈。片上光链路已被视为可能的解决方案,以减少互连对集成电路中最长互连的功耗和性能的影响,例如在不同内核之间提供非常高的带宽。低损耗的Si波导和1.55 µm波长的快速光电探测器与CMOS制造兼容,但是仍然需要高频和高效的激光器。制造流程基于将亚波长厚III–V裸片分子键合到200 mm SOI晶片上,该晶片包含高度为220 nm的Si波导和用于光收集的光栅耦合器。在这项工作中介绍了在200 mm CMOS引导线上制造的III–V型微盘激光器。在第一部分中,将激光器耦合到Si波导,并研究不同的耦合方案。在第二部分中,通过主动控制耦合损耗,在两个不同的点耦合激光,以调制其发射。实验证明了发射波长的控制和激光的直接调制。实验研究了两种具有不同耦合方案的设备,并比较了它们的性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号