Computer simulation of an operation of the 1.3-µm phosphide-based MQW TJ-VCSELs: excitation of various transverse LPij modes

摘要

A comprehensive fully self-consistent optical-electrical-thermal-recombination model of the 1.3-µm tunnel-junction (TJ) InAsP/InGaAsP and AlGaInAs/AlGaInAs vertical-cavity surface-emitting diode lasers (VCSELs) is used to determine their continuous-wave (CW) performance characteristics. As expected, for the devices with large TJ, higher-order transverse LPij modes exhibit the lowest lasing thresholds. However, the desired single fundamental LP01 mode operation remains dominating one for tunnel junctions of diameters up to 7 µm (InAsP/InGaAsP VCSEL) and 6 µm (AlGaInAs/AlGaInAs VCSEL) within quite a wide range of ambient temperatures: 290 – 355 K and 290 – 405 K, respectively. Therefore, the 1.3-µm InAsP/InGaAsP and AlGaInAs/AlGaInAs multiple quantum well VCSELs have been found to offer a very promising CW performance as sources of carrier radiation for the optical fibre communication.