首页> 外文会议>2011 7th Conference on Ph.D. Research in Microelectronics and Electronics >Photon counting module based on InGaAs/InP Single-Photon Avalanche Diodes for near-infrared counting up to 1.7 µm
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Photon counting module based on InGaAs/InP Single-Photon Avalanche Diodes for near-infrared counting up to 1.7 µm

机译:基于InGaAs / InP单光子雪崩二极管的光子计数模块,可进行高达1.7 µm的近红外计数

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InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have good performance to be successfully employed in many applications that demand single photon detection in the 1 – 1.7 µm wavelength range. However, in order to fully exploit such detectors, they have to be operated in optimized working conditions using dedicated electronics. We present the design and experimental characterization of a high-performance compact detection module able to operate at best InGaAs/InP SPADs. The module includes a pulse generator for gating the detector, a front-end circuit for avalanche sensing, a fast circuitry for detector quenching and resetting and some sub-circuits for signal conditioning. Experimental measurements prove the state-of-the-art performance and its great flexibility to fit the different applications.
机译:InGaAs / InP单光子雪崩二极管(SPAD)具有良好的性能,可成功用于许多需要在1 – 1.7 µm波长范围内进行单光子检测的应用中。但是,为了充分利用此类检测器,必须使用专用电子设备在优化的工作条件下运行它们。我们介绍了能够在最佳InGaAs / InP SPAD下运行的高性能紧凑型检测模块的设计和实验特性。该模块包括用于门控检测器的脉冲发生器,用于雪崩感测的前端电路,用于检测器淬灭和复位的快速电路以及用于信号调节的一些子电路。实验测量证明了其最新的性能及其适应不同应用的巨大灵活性。

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