The paper presents a new match line sense amplifier for Content Addressable Memory. It successfully addresses the weaknesses of contemporary designs. Extensive simulation results using a 1 V/65 nm CMOS process from STMicroelectronics have verified that the proposed sense amplifier outperforms other five contemporary designs in terms of energy consumption, area requirement and robustness. This is achieved by using a differential amplifier coupled with a pulse precharge technique. More specifically, the proposed sensing technique consumes 78% less energy than the conventional design. Additionally, it can work under a wide range of temperatures (from 0 °C to 100 °C) and is almost insensitive to process variations.
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机译：本文提出了一种用于内容可寻址存储器的新匹配线读出放大器。它成功地解决了当代设计的弱点。来自STMicroelectronics的1 V / 65nm CMOS工艺的广泛仿真结果已经证实了所提出的读出放大器在能耗，面积要求和鲁棒性方面优于其他五个现代设计。这是通过使用与脉冲预充电技术耦合的差分放大器来实现的。更具体地，所提出的传感技术比传统设计消耗少78％。另外，它可以在宽范围的温度（从0°C到100°C）下工作，并且几乎不敏感到工艺变化。
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