Bias dependence of spin signals in graphene

摘要

Spin injection and transport in graphene, based on generation of a pure spin current, is discussed.Spin injection is achieved by using a non-local 4-terminal measurement technique at room temperature. Bias current dependence of the spin signals are so unique that the spin signals are less affected by the bias electric current, which indicates the spin polarization of the transported spins are robust. The bias dependence under positive and negative bias currents can be plausibly explained by taking spin drift in graphene into account.