Design of CMOS inductor-less LNA with active balun

摘要

In this paper, a wide-band CMOS inductor-less low noise amplifier (LNA) with active balun is presented, in which the noise-canceling technique is exploited to reduce the thermal noise of input transistor. The LNA combining with active balun can convert the single-ended RF signal into differential signals, so off-chip balun is not needed. Furthermore, the LNA is inductorless, which can reduce chip area. The LNA is designed in TSMC 0.18µm RF CMOS process with 1.8V supply voltage. The simulation results show that the noise figure is less than 3.9dB, the input match is less than −11.7dB rang from 150MHz to 600MHz and IIP3 is 1.03dBm.