Characterizing phase switching structures for ESD protection

摘要

We propose a non-traditional nano phase switching ESD protection mechanism and systematic characterization of a set of prototype nano crossbar phase switching ESD structures. Experimental results using transmission line pulse (TLP) and very-fast TLP (VF-TLP) testing confirm the new ESD protection concept and reveal critical ESD protection properties related to device structures, sizes and material compositions. Sample structures demonstrated very fast response to 100pS ESD transient, extremely low leakage of pA level, varying ESD triggering voltage and robust HBM ESD protection capability of at least 215V/µm2. This comprehensive characterization shall lead to design optimization of the new nano crossbar ESD protection structures for advanced ICs.