Conventional on-chip electrostatic discharge (ESD) protection structures for integrated circuits (ICs) rely on in-Si p-n-junction-based devices, which have many inherent disadvantages unsuitable for ICs at nanonodes. This letter reports a novel above-IC graphene-based nanoelectromechanical system (gNEMS) transient switch ESD protection mechanism and structure. Transmission line pulse testing shows dual-polarity transient ESD switching effect with a response time down to 200 ps. This gNEMS switch is a potential ESD protection solution to realize the above-Si ESD protection designs through 3-D integration in IC back end of line.
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