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SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

机译：重离子辐照下三星和微米8Gb SLC NAND闪存的SEU和MBU角度依赖性

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The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

机译：在Ar，Fe和Kr辐照下测量了两个8 Gb NAND闪存Samsung和Micron的SEU和MBU横截面的角度依赖性。全向灵敏度是根据实验结果计算得出的。

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《2011 IEEE Radiation Effects Data Workshop》|2011年|p.1-5|共5页
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Grurmann Kai; Walter Dietmar; Herrmann Martin; Gliem Fritz; Kettunen Heikki; Ferlet-Cavrois Veronique;
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中图分类无线电技术;
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SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

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