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On Screening Reliability Using Lithographic Process Corner Information Gleaned from Tester Measurements

机译:使用从测试仪测量中收集的光刻工艺角信息筛选可靠性

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Current printability issues can be attributed to sub-wavelength lithography and its sensitivity to manufacturing process variations. Resulting process variations cause performance, yield and reliability problems. As noted in ITRS, conventional burn-in test is losing cost-effectiveness in reliability screening. In this paper, we use lithography process corner information in reliability screening. The lithographic process corner information is decoded from circuit measurements using a tester. We propose two methodologies for binning of dies based on Mean Time to Failure (MTTF). Lithography aware LUT based binning uses pre-estimated MTTF values to bin dies based on the detected litho-process corner. Lithography aware pattern based binning uses test patterns specific to litho-process corner along with existing techniques like burn-in test or Electrical Line width Metrology (ELM). Accurate determination of die level process corner is an important step employed in the proposed methodology. This work aims at: a) test Pattern generation for increased reliability test coverage incorporating manufacturing variations, b) utilization of die based process corner information for choosing the best test pattern set for improved fault coverage, c) achieving acceleration of infant mortality within the manufacturing test flow, and d) die-level determination of MTTF incorporating lithography process variation and hence decreasing the binning-yield loss. Experiments on ISCAS''85 circuits for varying exposure dose and de-focus values show an average variation of 20-30nm in interconnect widths, resulting in a deviation of as much as 40% in the estimated MTTF. It is also observed that, for maximum fault coverage, the test vector set changes in size and pattern across various process corners.
机译:当前的可印刷性问题可归因于亚波长光刻及其对制造工艺变化的敏感性。导致的工艺变化会导致性能,良率和可靠性问题。正如ITRS所述,传统的老化测试在可靠性筛选中正在失去成本效益。在本文中,我们将光刻工艺角点信息用于可靠性筛选。使用测试仪从电路测量中解码出光刻工艺的转折点信息。我们提出了两种基于平均失效时间(MTTF)的芯片装仓方法。基于光刻的基于LUT的装箱使用预先估计的MTTF值,根据检测到的光刻工艺角对装模进行装箱。基于光刻的图案化装仓使用特定于光刻工艺转角的测试图案以及现有技术(例如老化测试或电气线宽计量学(ELM))。准确确定芯片级工艺角是建议方法中的重要步骤。这项工作的目标是:a)生成测试图案以提高可靠性,并覆盖制造差异,从而覆盖更大的测试范围; b)利用基于管芯的工艺角信息来选择最佳测试图案集,以改善故障范围; c)加快制造过程中婴儿死亡率测试流程,以及d)结合光刻工艺变化确定MTTF的管芯级,从而减少装箱良率损失。在ISCAS''85电路上进行的用于改变曝光剂量和散焦值的实验表明,互连宽度的平均变化为20-30nm,导致估计的MTTF偏差高达40%。还可以观察到,为了获得最大的故障覆盖率,测试向量集在各个过程角上的大小和模式都会发生变化。

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