Design and simulation of differential active inductor with 0.18 um CMOS Technology

摘要

In this paper we present differential active inductor in CMOS technology. The supply voltage for this circuit is 1.8V. A self resonant frequency of 5GHz is obtained. The range of sweep for inductance (L) achieved from 1nH up to 70nH. In this design we used 0.18um RFCOMS transistor and Advanced Design system (ADS) for Design and simulation circuits.