Comprehensive study of systematic and random variation in Gate-Induced Drain Leakage for LSTP applications

摘要

Systematic and random variability of Gate-Induced Drain Leakage (GIDL) current have been studied for the first time. Trap-assisted tunneling current shows more instability than band-to-band tunneling current in every kinds of variations resulting from high sensitivity of the traps to impurities under MOSFET channel.