首页> 外文会议>2011 IEEE MTT-S International Microwave Symposium Digest >Time-domain measurement system using Track Hold Amplifier applied to pulsed RF characterization of high power GaN devices
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Time-domain measurement system using Track Hold Amplifier applied to pulsed RF characterization of high power GaN devices

机译:使用跟踪与保持放大器的时域测量系统应用于大功率GaN器件的脉冲RF表征

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We propose in this paper a time-domain test bench for the pulsed characterization of a high Power GaN Amplifier. Our findings are based on a Track and Hold Amplifier for the down-conversion of RF spectra using the sub harmonic sampling principle. The use of wideband THA to replace samplers or mixers enables reducing component density in an analog domain. It permits direct digitization of entire pulsed RF spectrum, bringing more flexibility in the receiver's performance by enhancing the dynamics and bandwidth. This test bench is capable of completely extracting the phase, amplitude and pulse profile of the RF signal. Power characteristics, phase and amplitude information for multiple bursts of pulses of a 50 W GaN HEMT Nitronex (NPTB00050B) power amplifier have been measured using the proposed calibrated measurement system. The low frequency memory effects (thermal and trapping) of high power GaN amplifier were also measured.
机译:我们在本文中提出了一种时域测试平台,用于大功率GaN放大器的脉冲表征。我们的发现基于使用亚谐波采样原理对射频频谱进行下变频的跟踪和保持放大器。使用宽带THA代替采样器或混频器可以降低模拟域中的组件密度。它可以对整个脉冲RF频谱进行直接数字化,从而通过增强动态性和带宽为接收器的性能带来更大的灵活性。该测试台能够完全提取RF信号的相位,幅度和脉冲轮廓。使用建议的校准测量系统测量了50 W GaN HEMT Nitronex(NPTB00050B)功率放大器的多个脉冲猝发的功率特性,相位和幅度信息。还测量了高功率GaN放大器的低频存储效应(热和陷阱)。

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