Tunneling between low-dimensional states in nanocrystalline/crystalline Si heterostructures

摘要

The tunneling rate of a quantum well to a quantum dot is theoretically inferred by means of a quantum mechanical model of a two-dimensional quantum well coupled to a zero-dimensional quantum dot and the transfer Hamiltonian method. In the case of nanocrystalline/crystalline Si heterostructures, influences of the parameters such as nanocrystalline Si quantum dot size, width as well as depth of interface quantum well on the tunneling rate were investigated with numerical simulation. The results indicate that tunneling rate has peak values under different radii of the quantum dot, and it reduces with the increasing width and depth of quantum well. The numerical analysis can provide the train of thought for designing nanoelectronic devices and enlightening its potential applications.