Relationship of dark current and doping concentration for MCT photodiode detector design

摘要

Hg1-xCdxTe (MCT) is the most important semiconductor alloy system for infrared (IR) detectors, and zero-bias resistance-area products (R0A) is a crucial factor of MCT Photovoltaic detector's performance whose value is determined by the dark current of photovoltaic detector. In this paper, with Synopsys device simulation software, both current-voltage characteristic and R0A products of n-on-p MCT Photovoltaic Detector had been simulated and analyzed with varying implantation dose. The simulated results indicated that dark current and R0A products depended distinctly upon the doping concentration of photovoltaic detectors, and the optimal doping concentration was obtained for n-on-p MCT Photovoltaic Detector.