A 120GHz 10Gb/s phase-modulating transmitter in 65nm LP CMOS

摘要

This paper presents a 120GHz fully integrated 65nm low power (LP) CMOS transmitter that achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth is available. This allows multi-gigabit-per-second communication which provides an answer to the ever-increasing demand for higher data rates in wireless systems. However, wideband modulation of a 120GHz signal in 65nm LP CMOS is a challenge.