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Commutation losses reduction in high voltage power MOSFETs by proper commutation circuit

机译:通过适当的换向电路减少高压功率MOSFET的换向损耗

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A novel solution for last generation power MOSFETs is proposed for the first time to reduce commutation losses and easy the voltage and current control during hard switching commutations. The proposed structure is easily applicable to any driver topology and it is devoted to the realization of an hard-switched PWM inverter leg based on two power mosfets. The bidirectional conduction capability of unipolar-channel-based power components has been always considered ideal to reduce the conduction losses in inverter-leg structure, particularly when the maximum mosfets conduction losses is less than the body-diode one. Theoretical analysis and experimental results are given to prove the feasibility of the proposed structure.
机译:首次提出了一种针对上一代功率MOSFET的新颖解决方案,以减少换向损耗并简化硬开关换向期间的电压和电流控制。所提出的结构很容易适用于任何驱动器拓扑,并且致力于基于两个功率MOSFET的硬开关PWM逆变器支路的实现。一直以来,基于单极通道的功率组件的双向传导能力一​​直被认为是降低逆变器支路结构中传导损耗的理想选择,特别是当最大MOSFET传导损耗小于体二极管的传导损耗时。理论分析和实验结果证明了该结构的可行性。

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