首页> 外文会议>Advances in electroceramic materials II >TEMPERATURE DEPENDENCES OF PIEZOELECTRIC PROPERTIES OF TEXTURED (Bi_(1/2)K_(1/2))TiO_3-BaTi0_3 LEAD-FREE PIEZOELECTRIC CERAMICS
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TEMPERATURE DEPENDENCES OF PIEZOELECTRIC PROPERTIES OF TEXTURED (Bi_(1/2)K_(1/2))TiO_3-BaTi0_3 LEAD-FREE PIEZOELECTRIC CERAMICS

机译:(Bi_(1/2)K_(1/2))TiO_3-BaTi0_3无铅压电陶瓷的压电性能的温度依赖性

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Temperature dependences of piezoelectric properties were investigated for (l-x) (Bi_(1/2)K_(1/2))TiO_3-xBaTiO_3 [abbreviated to BKT-BT100x] ceramics prepared by a reactive templated grain growth (RTGG) method using platelike Bi_4Ti_3O_(12) particles as a template. The degree of orientation, F, which was determined by the Lotgering method using an X-ray diffraction pattern, achieved ≈83% in the textured BKT-BT10 ceramic. Textured BKT-BT10 ceramic with a homogeneous microstructure was obtained by the longer sintering time of 100 h. The field-induced strains and piezoelectric properties of the BKT-BT10 ceramic were improved by the grain orientation. In particular, the piezoelectric strain constant, d_(33), and the normalized strain, d_(33)~*, of the textured BKT-BT10 ceramic in a direction parallel (//) to the tape stacking direction were 121 pC/N and 211 pm/V (at 80 kV/cm), respectively. From the temperature dependences of piezoelectric properties, a depolarized temperature, T_d, was about 275°C and the d_(33) indicated approximately 278 pC/N at 250°C.
机译:通过使用板状Bi_4Ti_3O_反应模板生长(RTGG)方法制备的(lx)(Bi_(1/2)K_(1/2))TiO_3-xBaTiO_3 [缩写为BKT-BT100x]陶瓷研究了压电性能的温度依赖性。 (12)以颗粒为模板。取向度F是通过Lotgering方法使用X射线衍射图确定的,在纹理化的BKT-BT10陶瓷中达到了约83%。通过较长的100 h烧结时间,可以得到具有均匀微观结构的BKT-BT10织构陶瓷。 BKT-BT10陶瓷的场致应变和压电性能通过晶粒取向得以改善。特别地,纹理化的BKT-BT10陶瓷在与带堆叠方向平行(//)的方向上的压电应变常数d_(33)和归一化应变d_(33)〜*为121pC / N。和211 pm / V(在80 kV / cm时)。从压电特性的温度依赖性来看,去极化温度T_d约为275°C,d_(33)在250°C时约为278pC / N。

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