Inelastic cross-sections of low-energy electrons in silicon for the simulation of heavy ion tracks with the GEANT4-DNA toolkit

摘要

The Energy-Loss Function (ELF) of silicon has been used to calculate differential and total inelastic cross-sections of incident electrons. The model has been validated in the 16.7 eV-50 keV incident energy range by comparing the stopping powers, mean free paths and ranges to experimental and evaluated ICRU data. The cross sections were then used to simulate low-energy electron tracks in silicon using the Geant4-DNA toolkit. Generation of low-energy electrons are clearly seen. The obtained ranges are consistent with experimental data.