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Thin pixel development for the Layer0 of the SuperB Silicon Vertex Tracker

机译:SuperB Silicon Vertex Tracker的Layer0的薄像素开发

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The SuperB asymmetric e+ e collider has been designed to deliver a luminosity greater than 1036 cm−2 s−1 maintaining moderate beam currents. Comparing to current B-Factories, the reduced center-of-mass boost of the SuperB machine requires an improved vertex resolution to allow precision measurements sensitive to New Physics. Therefore the SuperB Silicon Vertex Tracker will be equipped with an innermost Layer0 with a radius of about 1.5 cm, high granularity, low material budget and able to withstand a background rate of several MHz/cm2. We report on the status of the R&D on the different options under study for the Layer0: DNW MAPS, hybrid pixels and thin pixels developed with vertical integration technology.
机译:SuperB非对称e + e -对撞机设计用于提供大于10 36 cm −2 的光度s −1 保持适中的电子束电流。与当前的B工厂相比,SuperB机器降低的质心提升需要改进的顶点分辨率,以允许对新物理学敏感的精确测量。因此,SuperB Silicon Vertex Tracker将配备最里面的Layer0,其半径约为1.5厘米,高粒度,低材料预算并且能够承受几MHz / cm 2 的背景速率。我们针对第0层:DNW MAPS,采用垂直集成技术开发的混合像素和薄像素研究的不同选项的研发状况进行了报告。

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