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Test results and irradiation performances of 3-D circuits developed in the framework of ATLAS hybrid pixel upgrade

机译:在ATLAS混合像素升级框架下开发的3-D电路的测试结果和辐照性能

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Vertex detectors for High Energy Physics experiments require pixel detectors featuring high spatial resolution, very good signal to noise ratio and radiation hardness. A way to face new challenges of ATLAS/SLHC future hybrid pixel vertex detectors is to use the emerging 3-D Integrated Technologies. However, commercial offers of such technologies are only very few and the 3-D designer's choice is then hardly constrained. Moreover, as radiation hardness and specially SEU tolerance of configuration registers is a crucial issue for SLHC vertex detectors and, as commercial data on this point are always missing, a reliable qualification program is to be developed for any candidate technology. We will present the design and test (including radiation tests with 70 kV, 60W X-Ray source and 24 GeV protons) of Chartered, 130nm Low Power 2-D chips realized for this qualification.
机译:用于高能物理实验的顶点检测器需要具有高空间分辨率,非常好的信噪比和辐射硬度的像素检测器。面对ATLAS / SLHC未来的混合像素顶点检测器的新挑战的一种方法是使用新兴的3D集成技术。但是,此类技术的商业报价很少,因此3D设计人员的选择几乎不受限制。此外,由于辐射硬度和配置寄存器的特殊SEU公差对于SLHC顶点检测器来说是至关重要的问题,并且由于始终缺少有关这一点的商业数据,因此将针对任何候选技术开发可靠的鉴定程序。我们将介绍为此认证而实现的特许130nm低功耗2D芯片的设计和测试(包括使用70 kV,60W X射线源和24 GeV质子的辐射测试)。

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