Semi-quantitative analysis of trace elements by Secondary Ion Mass Spectrometry

摘要

Secondary Ion Mass Spectrometry (SIMS) offers a technique of surface specific analysis with an information depth as low as 1 nm. SIMS also has high sensitivity for most elements. It is a viable analysis technique to investigate superficial residues and contamination on the surfaces of components used in IC packaging, though quantification by SIMS is difficult except for the specific case of trace concentrations with calibration standards.