首页> 外文会议>2010 12th Electronics Packaging Technology Conference >Process development of 17.5µm gold wire bonding on C65 low-k devices with probe marks
【24h】

Process development of 17.5µm gold wire bonding on C65 low-k devices with probe marks

机译:在带有探针标记的C65低k器件上开发17.5µm金丝键合工艺

获取原文
获取外文期刊封面目录资料

摘要

Today''s semiconductor industry continues to deliver high performance and cost effective solution. Copper wire bonding is one of the hot topics on low cost alternative packaging materials. However, copper wire bonding is still not fully established and it requires significant engineering effort especially on the C65 low k, wafer with probed Al bond pads. A thin gold wire compared to copper wire will be a faster, simpler and more efficient packaging solution for low k device. In this paper, we covered the wire bond development of 17.5µm gold wire on laminate package.
机译:当今的半导体行业继续提供高性能和高性价比的解决方案。铜线键合是低成本替代包装材料的热门话题之一。然而,铜线键合仍未完全建立,并且需要大量的工程工作,尤其是在具有探测到的Al键合焊盘的C65低k晶片上。与低铜线相比,与铜线相比,较细的金线将是一种更快,更简单,更有效的封装解决方案。在本文中,我们讨论了在层压封装上17.5µm金线的引线键合开发。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号