Interference microwave fotometers of optical radiation parameters

摘要

In work is considered process of the interaction laser and microwave radiation with lumpy semiconductor which distribution concentration carriers depends on intensities of the laser radiation. It is shown that factors of the fading and reflections of the microwave radiation from plate of the semiconductor with photo generated carrier charge greatly hang from density of the flow to energy of the laser radiation. The possible design measuring devise parameter of the optical radiation is considered.