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Development of the Method of Determining of InGaN Based Leds Tended to Early Degradation on the Results of Current Tests

机译:开发基于IngaN的LED的方法趋于早期降解电流测试结果

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Low-power commercial InGaN based light-emitting diodes were tested at a constant current of 25 A/cm2 for 7,000 hours. A methode for determining of LEDs tended to early degradation based on electrical and electro-optical characteristics measured in the threshold current region has been developed. It is determined that the rate of degradation is higher for LEDs with low values of the initial quantum efficiency.
机译:基于低功耗的商业indaN的发光二极管在25A / cm 2的恒定电流下测试7,000小时。已经开发出用于基于在阈值电流区域中测量的电气和电光特性倾向于早期降解的LED的甲克。确定具有初始量子效率低的LED的降解速率较高。

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