首页> 外文会议>Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 >Charging and discharging studies in microwave capacitive switches under high field pulse discharges
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Charging and discharging studies in microwave capacitive switches under high field pulse discharges

机译:高场脉冲放电下微波电容开关的充放电研究

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This paper investigates the impact of pulse induced charging on RF-MEMS capacitive switches. The main goal here is to better understand the charging and discharging process involved in high field discharges. This is a necessary study for the reason that the reliability of the structure is directly affected by the underlying charging/discharging processes. Electrostatic discharge (ESD) experiments were carried out using a transmission-line-pulsing technique and compared with a human-body-model testing method. The tests were done on a test-vehicle design of a W-band capacitive RF-MEMS switch. Base on capacitance vs. voltage measurements we highlight the importance of the dielectric material properties and its impact on the device immunity with respect to pulse induced failure mechanisms.
机译:本文研究了脉冲感应充电对RF-MEMS电容开关的影响。这里的主要目的是更好地了解高场放电所涉及的充电和放电过程。这是一项必要的研究,因为结构的可靠性直接受到基础充电/放电过程的影响。使用传输线脉冲技术进行了静电放电(ESD)实验,并将其与人体模型测试方法进行了比较。测试是在W波段电容式RF-MEMS开关的测试车辆设计上完成的。根据电容与电压的关系,我们重点介绍了介电材料特性的重要性及其对器件抗脉冲诱发故障机制的抵抗力的影响。

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