Design of GaN-based light-emitting diodes with enhanced lateral light extraction

机译：具有增强的侧向光提取的GaN基发光二极管的设计

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We have investigated enhanced light extraction of GaN-based light-emitting diodes (LEDs) by design of mesa-holes.¹ Based on Snell's law, the geometry of mesa-holes acting as lateral exits for guided mode could be optimized. The LED fabricated with mesa-holes showed a 27% enhancement in output power as compared to reference LED, which was in agreement with optical ray-tracing calculations.

机译：我们已经通过台面孔的设计研究了增强的GaN基发光二极管（LED）的光提取。^{1 根据斯涅尔定律，台面孔的几何形状充当引导模式的横向出口可以优化。与参考LED相比，带有台面孔的LED的输出功率提高了27％，这与光线追踪计算相符。}

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《2010 Conference on Optoelectronic and Microelectronic Materials and Devices》|2010年|p.61-62|共2页
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中图分类光电子技术、激光技术;
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2. Functional imprinting structures on GaN-based light-emitting diodes for light pattern modulation and light extraction efficiency enhancement [J] . Tu S.-H., Wu S.-Y., Lee Y.-C., Optical review . 2010,第4期

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3. Enhancement of light extraction efficiency in the GaN-based light-emitting diodes by selective growth of ZnO nanorods [J] . Park Ji-Yeon, Lee Sung-Nam Applied Physics . 2019,第2期

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4. Design of GaN-based light-emitting diodes with enhanced lateral light extraction [C] . {missing} Conference on Optoelectronic and Microelectronic Materials and Devices . 2010

机译：具有增强横向浅光提取的GaN的发光二极管设计
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography [O] . Shengxiang Jiang, Yulong Feng, Zhizhong Chen, -1

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7. Enhancement of Light Extraction in GaN-based Light-emitting Diodes with ZnO Nanosheets [O] . Jing Gui, Naisen Yu, Yuyanyao Yang, 2017

机译：用ZnO纳米蛋白酶提高GaN的发光二极管光提取

Design of GaN-based light-emitting diodes with enhanced lateral light extraction

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