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Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver

机译:DS16F95 RS-485收发器中的单事件和低剂量率TID效应

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Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.
机译:国家半导体DS16F95辐射硬化RS-485收发器中单事件表征单事件和低剂量率TID效应。发病令不到5毫升CM2 / mg的扰乱,并建立了对操作条件的依赖性。在Eldrs下的样品在辐射到30krd(Si)/ s的辐射后粘附到电气规范。

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