首页> 外文会议>2010 IEEE International Symposium on Phased Array Systems and Technology >A silicon-based, all-passive, 60 GHz, 4-element, phased-array beamformer featuring a differential, reflection-type phase shifter
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A silicon-based, all-passive, 60 GHz, 4-element, phased-array beamformer featuring a differential, reflection-type phase shifter

机译:基于硅的全无源60 GHz四元件相控阵波束形成器,具有差分反射型移相器

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This paper presents an all-passive, 4-element, phased-array beamformer based on a differential, reflection-type phase shifter (RTPS) operating in the 60GHz band. The RTPS consists of a differential, vertically-coupled, coupled-line hybrid and variable, parallel-LC, resonant, reflective loads, both of which enable low-loss millimeter-wave operation. The design considerations for a silicon-based implementation of all the beamformer elements are discussed in detail. In particular, the influence of the different RTPS components on its insertion loss is analyzed. The beamformer IC and a breakout of the RTPS are implemented using CMOS-only features of IBM''s 8HP 0.13¡jm SiGe BiCMOS process, and employ areas of 2.1mm2 and 0.33mm2, respectively, without probe pads. Differential s-parameter measurements at 60GHz show a phase-shift range greater than 150°, insertion losses of 4–6.2dB in the RTPS and 14–16dB in the beamformer, and an isolation better than 35dB between adjacent beamformer channels. Measurements across temperature and process variations are also presented.
机译:本文介绍了一种基于60 GHz频带的差分反射型移相器(RTPS)的全无源4元件相控阵波束形成器。 RTPS由差分,垂直耦合,耦合线混合和可变并行LC谐振反射负载组成,这两种负载均可实现低损耗毫米波工作。详细讨论了所有波束形成器元素的基于硅的实现的设计注意事项。特别是,分析了不同的RTPS组件对其插入损耗的影响。波束形成器IC和RTPS的突破使用IBM的8HP0.13μmSiGe BiCMOS工艺的纯CMOS功能实现,并采用2.1mm 2 和0.33mm 2的面积,分别没有探针板。在60GHz下的差分s参数测量结果显示,相移范围大于150°,RTPS的插入损耗为4–6.2dB,波束形成器的插入损耗为14–16dB,相邻波束形成器通道之间的隔离度优于35dB。还介绍了跨温度和过程变化的测量。

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