A case study of high temperature pass analysis using thermal laser stimulation technique

摘要

The intrinsic carrier concentration n_i is highly temperature dependent in non-degenerate semiconductors. At high temperatures, thermally generated electron-hole pairs contribute to the carrier concentrations. As a result, the generation of free carriers can be achieved through light-to-heat conversion using near-infrared (NIR) laser. This paper describes the use of the thermal laser stimulation (TLS) technique to modify the electrical properties of a heated passive device so that the direct failure location can be revealed in order to clarify the cause of the iddq leakage that will disappear during high temperature tests.