首页> 外文会议>Power and Energy Engineering Conference (APPEEC), 2010 >Analysis of the Conducted Interfering Mechanism within SVC-based substations
【24h】

Analysis of the Conducted Interfering Mechanism within SVC-based substations

机译:基于SVC的变电站内的传导干扰机制分析

获取原文

摘要

Wide applications of large capacity FACTS (Flexible AC Transmission Systems) equipment within nowadays high voltage substations result in large amount of broadband electromagnetic emissions, which brings electromagnetic contamination to power grids and the environment, and even causes self-malfunction or unaccepted response of victim devices positioned nearby. The interfering mechanism needs to be clarified before sufficient applicable immunity measures can be taken. In this paper, a simulation model is established to investigate on the conducted mechanism in substations installed with SVC (Static Var Compensator) devices with a view to characterizing the main causes of the conducted interference. The high-frequency macro model for thyristors is established with a nonlinear time-varying resistor to simulate the switching characteristics of the thyristors. Based on the above macro model for thyristors, a concrete model of SVC including TSC (Thyristor-switched Capacitor) and TCR (Thyristor-controlled Reactor) is further proposed. In addition, high-frequency equivalent models for frequency-domain compensation of both CT and PT, based on their calibrated non-flat amplitude-frequency characteristics, are adopted to rectify the emissions levels from the SVC switching. The conducted interferences by simulations are correlated with that from on-site measurements, which indicates that the high-frequency switching characteristics of thyristors are the main causes of conducted emissions.
机译:如今,高压变电站在大容量FACTS(柔性AC传输系统)设备中的广泛应用导致大量宽带电磁辐射,这会给电网和环境带来电磁污染,甚至导致受害设备自身故障或无法接受的响应位于附近。在采取足够的适用免疫措施之前,需要弄清干扰机制。本文建立了一个仿真模型,以研究装有SVC(静态无功补偿器)设备的变电站中的传导机制,以表征传导干扰的主要原因。利用非线性时变电阻建立晶闸管高频宏模型,以模拟晶闸管的开关特性。基于上述晶闸管的宏模型,进一步提出了包括TSC(晶闸管开关电容器)和TCR(晶闸管控制电抗器)的SVC的具体模型。另外,基于校准的非平坦幅度-频率特性,采用高频等效模型对CT和PT进行频域补偿,以校正SVC开关的发射电平。模拟的传导干扰与现场测量的干扰相关,这表明晶闸管的高频开关特性是传导发射的主要原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号