A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm² cell in 32nm high-k metal-gate CMOS

摘要

This paper presents a configurable SRAM with 0.149 ¿nf cell in 32 nm high-k metal-gate CMOS. Constant-negative-level write buffer adjusts bitline level automatically for configuration range of four to 512 cells/bitline, improving write margin at low voltage. Measurement results demonstrate that cell-failure-rate improves by two orders of magnitude at 0.5 V.