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Lithography Hotspot Discovery at 70nm DRAM 300mm Fab : Process Window Qualification Using Design Base Binning

机译:70nm DRAM 300mm Fab上的光刻热点发现:使用设计基础分档进行工艺窗口鉴定

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Identifying hotspots - structures that limit the lithography process window - become increasingly important as the industry relies heavily on RET to print sub-wavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout - to obtain the best sensitivity (b) Design Based Binning - for pattern repeater analysis (c) Intelligent sampling - for the best DOI sampling rate. This paper evaluates two different analysis strategies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.
机译:随着行业严重依赖RET来打印亚波长设计,识别热点(限制光刻工艺窗口的结构)变得越来越重要。为此,KLA-Tencor的专利工艺窗口鉴定(PWQ)方法已在各种晶圆厂中使用。 PWQ方法具有三个主要优点(a)PWQ布局-获得最佳灵敏度(b)基于设计的合并-用于模式中继器分析(c)智能采样-以获得最佳DOI采样率。本文评估了在Inotera Memories,Inc.成功部署的SEM评论采样的两种不同分析策略。我们提出了一种结合位置重复器和模式重复器的新方法。基于最近的案例研究,新的采样流程将数据分析和采样时间从6小时减少到1.5小时,从而保持了最大的DOI采样率。

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