首页> 外文会议>International symposium on photoelectronic detection and imaging;ISPDI 2009 >Electrical and optical properties of Mn_(1.56)Co_(0.96)Ni_(0.48)O_4 films for infrared detection
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Electrical and optical properties of Mn_(1.56)Co_(0.96)Ni_(0.48)O_4 films for infrared detection

机译:Mn_(1.56)Co_(0.96)Ni_(0.48)O_4薄膜的电学和光学性质用于红外检测

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Mn_(1.56)Co_(0.96)Ni_(0.48)O_4 films with spinel structure for infrared detection are prepared on A1_2O_3 substrate by chemical solution deposition method. The resistance vs temperature (R-T) characteristics at 130~304 K temperature range and infrared transmission spectrum (1-10 μm) are measured and temperature coefficients of resistance (TCR) are calculated. The conduction process can be explained well by hopping conduction. At low temperature nearest neighbor hopping (NNH) mechanism fits the data well, while at high temperature, variable range hopping (VRH) mechanism dominates the system, and this transition temperature is at about 200 K. The value of TCR is about -3.73% K~(-1) at 300 K. Mn_(1.56)Co_(0.96)Ni_(0.48)O_4 films exhibit a strong absorption around 2μm which is considered to be corresponding to the gap of energy bands showed by infrared transmission spectrum. The band gap obtained from the transmission spectrum data using the Tauc's law is ~0.567 eV.
机译:通过化学溶液沉积法在Al_2O_3基体上制备了具有尖晶石结构的Mn_(1.56)Co_(0.96)Ni_(0.48)O_4薄膜用于红外检测。测量了130〜304 K温度范围内的电阻-温度(R-T)特性和红外透射光谱(1-10μm),并计算了电阻的温度系数(TCR)。传导过程可以通过跳跃传导很好地解释。在低温下,最近邻居跳跃(NNH)机制很好地拟合了数据,而在高温下,可变范围跳跃(VRH)机制主导了系统,该过渡温度约为200K。TCR的值约为-3.73%在300 K时K〜(-1)。Mn_(1.56)Co_(0.96)Ni_(0.48)O_4薄膜在2μm附近表现出较强的吸收,这被认为与红外透射光谱显示的能带隙相对应。使用Tauc定律从透射光谱数据获得的带隙为〜0.567 eV。

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