Optimization Designed Frame Transfer Area Array Sensor with Vertical Antiblooming Structure by The CAD Tools

摘要

The frame transfer Area Array Sensor with vertical antiblooming structure requires that all performance characteristics such as large charge capacity, high charge transfer efficiency, low read noise and low antiblooming voltage be optimized in a singlemanufacturable CCD (charge-coupled device). There is a common tendency to optimize one performance characteristic at the expense of others. With the goal of optimizing above all performance characteristics, a frametransfer area array sensors with vertical antiblooming structure is optimization designed by the CAD ( computer aided design ) tools and fabricated , which equal to twenty-six micron square pixel size with 516 ( H ) ×1028 ( v ) activepixels(the channel stop is 4μm and the photosensitive area is 22×22 μm×μm). At first , it is simply introduced the modeling of the frame transfer area array sensors with vertical antiblooming structure from the top to down and simulated by the CAD tools combined with the process and device models. The essential design and calculation of the CCD with antiblooming function are discussed in detail. And the process, layout and device parameters to design this frame transfer area array sensors (including the impurity concentration and layer thickness of the P-well and the buried-channel , and the design output amplifier) are optimized according to the above simulation. At the last, the device is fabricated and the performance characteristics ( e.g. charge capacity, charge transfer efficiency, read noise andantiblooming voltage ) are test to compare the simulation. To demonstrate the process used to optimize this frame transfer area array sensors with vertical antiblooming structure, this paper contains test data for this kind of CCD device which is optimization designed and fabricated by the CAD ( computer aided design ) tools. The test datas shows the way using the CAD tools optimization design a frame transfer area array sensors with vertical antiblooming structure correct.