Doping of diamond: state of the art and some pending questions

摘要

As a semiconductor, diamond is a promising material for the next generation of high power and high temperature electronic devices. Significant progresses have been made in the last decade on the growth of high quality homoepitaxial layers doped either with boron (for the p-type conductivity) or with phosphorus (for the n-type conductivity). In this work, we present a state of the art of diamond doping together with a few examples of pending questions.