Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT

摘要

The behavior of stacking faults with regard to V_f degradations and TEDREC phenomena for 4.5 kV SiCGT have been investigated through the use of light emission images. Stacking faults, which cause V_f degradations, are expanded when current densities are increased. A novel phenomena of V_f degradation reduction, TEDREC phenomena, was found, which can reduce degradation by increasing operating temperature. It was observed for the first time that stacking faults become inactive by elevating temperatures to more than 150 °C in spite of existing stacking faults, which is a factor that contributes to TEDREC phenomena.