1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

摘要

High-voltage normally-on VJFETs of 0.19 cm~2 and 0.096 cm~2 areas were manufactured in seven photolithographic levels with no epitaxial regrowth and a single ion implantation event. A self aligned guard ring structure provided edge termination. At a gate bias of-36 V the 0.096 cm VJFET blocks 1980 V, which corresponds to 91% of the 12 μm drift layer's avalanche breakdown voltage limit. It outputs 25 A at a forward drain voltage drop of 2 V (368 A/cm~2, 735 W/cm~2) and a gate current of 4 mA. The specific on-resistance is 5.4 mΩ cm~2. The 0.19 cm~2 VJFET blocks 1200 V at a gate bias of-26 V. It outputs 54 A at a forward drain voltage drop of 2 V (378 A/cm~2,755 W/cm~2) and a gate current of 12 mA, with a specific on-resistance of 5.6 mΩ cm~2. The VJFETs demonstrated low gate-to-source leakage currents with sharp onsets of avalanche breakdown.